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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 10 ZVN3310A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 100 200 2 20 625 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 100 40 15 5 5 7 6 7 500 10 100 0.8 2.4 20 1 50 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD 25V, I D=500mA V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V,I D=500mA V DS=25V,I D=500mA Forward Transconductance(1)(2 g fs ) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C iss C oss C rss t d(on) tr t d(off) tf 3-378 ZVN3310A TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) VGS= 10V 9V 8V 7V 6V 5V 4V 3V 0 10 20 30 40 50 ID(On) -On-State Drain Current (Amps) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 VGS= 10V 9V 8V 7V 6V 5V 4V 3V VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) 10 8 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 VDS= 25V 6 ID= 1A 0.5A 0.2A 0 0 4 8 12 16 20 4 2 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance () Transfer Characteristics 100 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID=-0.5A 10 ID= 1A 0.5A 0.2A rc ou -S in ra D es eR a ist eR nc n) (o DS Gate Thresh old Voltage VG S(th) 1 1 2 3 4 5 6 7 8 9 10 20 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS-Gate Source Voltage (Volts) T-Temperature (C) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature 3-379 ZVN3310A TYPICAL CHARACTERISTICS 160 VDS= 25V 120 160 gfs-Transconductance (mS) gfs-Transconductance (mS) 120 VDS= 25V 80 80 40 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 12 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VDS= 20V 50V ID=0.6A VGS-Gate Source Voltage (Volts) 50 16 14 12 10 8 6 4 2 0 80V C-Capacitance (pF) 40 30 Ciss 20 10 0 0 10 20 30 40 Coss Crss 50 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-380 |
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